High Magnetic Field Sensor Using LaSb2
D. P. Young, R. G. Goodrich, J. F. DiTusa, S. Guo, J. Chan, D. Hall, P. W. Adams
Abstract
The magnetotransport properties of single crystals of the highly anisotropic layered metal LaSb2 are reported in magnetic fields up to 45 T with fields oriented both parallel and perpendicular to the layers. Below 10 K the perpendicular magnetoresistance of LaSb2 becomes temperature independent and is characterized by a 100-fold linear increase in resistance between 0 and 45 T with no evidence of quantum oscillations down to 50 mK. The Hall resistivity is hole-like and gives a high field carrier density of n ~ 3x1020 cm-3. The feasibility of using LaSb2 for magnetic field sensors is discussed.
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