Hole Doping Dependence of the Coherence Length in La2-xSrxCuO4 Thin Films
H. H. Wen, H. P. Yang, S. L. Li, X. H. Zeng, A. A. Soukiassian, W. D. Si, X. X. Xi
Abstract
By measuring the field and temperature dependence of magnetization on systematically doped La2-xSrxCuO4 thin films, the critical current density jc(0) and the collective pinning energy Up(0) are determined in single vortex creep regime. Together with the published data of superfluid density, condensation energy and anisotropy, for the first time we derive the doping dependence of the coherence length or vortex core size in wide doping regime directly from the low temperature data. It is found that the coherence length drops in the underdoped region and increases in the overdoped side with the increase of hole concentration. The result in underdoped region clearly deviates from what expected by the pre-formed pairing model if one simply associates the pseudogap with the upper-critical field.
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