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Monte Carlo Study of Order-Disorder Layering Transitions in the Blume-Capel Model

L. Bahmad, A. Benyoussef, H. Ez-Zahraouy

cond-mat.softarXiv:cond-mat/0306536

Abstract

The order-disorder layering transitions, of the Blume-Capel model, are studied using the Monte Carlo (MC) simulations, in the presence of a variable crystal field. For a very low temperature, the results are in good agreement with the ground state study. The first order transition line, found for low temperatures, is connected to the second order transition line, seen for higher temperatures, by a tri-critical point, for each layer. The reentrant phenomena, caused by a competition of thermal fluctuations and an inductor magnetic field created by the deeper layers, is found for the first k0 layers from the surface, where k0 is exactly the number of layering transitions allowed by the ground state study. The layer magnetizations mk, the magnetic susceptibilities χm,k and the quadrupolar magnetic susceptibilities χq,k and the corresponding critical exponent, for each layer k, are also investigated.

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