Carrier induced ferromagnetism in room temperature ferromagnetic semiconductor rutile TiO2 doped with Co
H. Toyosaki, T. Fukumura, Y. Yamada, K. Nakajima, T. Chikyow, T. Hasegawa, H. Koinuma, M. Kawasaki
Abstract
A ferromagnetic semiconductor, rutile (Ti,Co)O2, exhibits anomalous Hall effect at room temperature. Strong dependence of the anomalous Hall effect, as well as the magneto-optic response, on the carrier concentration suggests carrier induced ferromagnetism in this compound. Both ferromagnetic responses are caused by the charge carriers at the band edge of host semiconductor, indicating possibilities of spintronics devices operable at room temperature.
Create a lesson
Related papers
Necessary conditions for benchmarking next-generation AI in materials discovery
Daniel E Widdowson, Tatiana V Kurlina, Olga D Anosova et al.
Doubly Metastable Synthesis for Accelerated Quantum Materials Discovery
Kyuho Lee, Berit H. Goodge, Soonhyun Kwon et al.
Phononic Frequency Combs in Twisted Bilayer Transition Metal Dichalcogenide Heterostructures from First Principles
Naman Arora, Adarsh Ganesan
Improved screening of doped ZrO2 catalysts for CO2 hydrogenation from graph-based machine learning
Karsten Walz Jensen, Mie Andersen, Raffaele Cheula
Dislocation mediated twin boundary faceting in β-Sn
John Israel, Ian Chesser, Khanh Dang et al.
Ferroelectric Domain-Wall Motion, Stability, and Frequency Responses under Different Screening-Charge Conservation Laws
Sergei V. Kalinin