Carrier-mediated ferromagnetic ordering in Mn ion-implanted p+GaAs:C
Y. D. Park, J. D. Lim, K. S. Suh, S. B. Shim, J. S. Lee, C. R. Abernathy, S. J. Pearton, Y. S. Kim, Z. G. Khim, R. G. Wilson
Abstract
Highly p-type GaAs:C was ion-implanted with Mn at differing doses to produce Mn concentrations in the 1 - 5 at.% range. In comparison to LT-GaAs and n+GaAs:Si samples implanted under the same conditions, transport and magnetic properties show marked differences. Transport measurements show anomalies, consistent with observed magnetic properties and with epi- LT-(Ga,Mn)As, as well as the extraordinary Hall Effect up to the observed magnetic ordering temperature (TC). Mn ion-implanted p+GaAs:C with as-grown carrier concentrations > 1020 cm-3 show remanent magnetization up to 280 K.
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