Gap evolution in nu=1/2 bilayer quantum Hall systems
Kentaro Nomura, Daijiro Yoshioka
Abstract
Fractional quantum Hall states in bilayer system at total filling fraction ν=1/2 are examined numerically under some ranges of the layer separation and interlayer tunneling. It is shown that the ground state changes continuously from two-component state to one-component state as the interlayer tunneling rate is increased, while the lowest excited state changes discontinuously. This fact explains observed unusual behavior of the activation energy which reveals upward cusp as a function of interlayer tunneling. Some trial wave functions for the ground state and quasihole states are inspected.
Create a lesson
Related papers
Coherent and ultra-low-power EDSR with a flopping-mode spin qubit in germanium
Alexei Orekhov, Wonjin Jang, Pan Zhang et al.
Disorder-induced modulation of the nonlinear Hall effect in Weyl semimetals
Juan A. Cañas, Daniel A. Bonilla, A. Martín-Ruiz
Coplanar Lateral Gating MoS2 on SrTiO3: A Unified Platform for Classical and Quantum Devices
Prasad Muragesh, Manav Murali, Venkatesha Modur Ramachandra et al.
Predictive Structure to Thermal Conductivity Modeling Framework for BEOL Interconnect Stacks in Advanced Technology Nodes Enabled by Extensive Layer Resolved Thermal Measurements
Zifeng Huang, Yiyang Sun, Tianyu Jia et al.
Plasmons in twisted bilayer graphene across dispersive and flat bands
Antonio Palamara, Michele Pisarra, Antonello Sindona
Highly uniform first-electron position in qubit arrays fabricated on dedicated QSOI(R) 300mm commercial platform
Johan Pelloux-Prayer, Elise Prin, Giselle A. Elbaz et al.