Very large magnetoresistance in lateral ferromagnetic (Ga,Mn)As wires with nanoconstrictions
C. Ruester, T. Borzenko, C. Gould, G. Schmidt, L. W. Molenkamp, X. Liu, T. J. Wojtowicz, J. K. Furdyna, Z. G. Yu, M. E. Flatte
Abstract
We have fabricated (Ga,Mn)As nanostructures in which domain walls can be pinned by sub-10 nm constrictions. Controlled by shape anisotropy, we can switch the regions on either side of the constriction to either parallel or antiparallel magnetization. All samples exhibit a positive magnetoresistance, consistent with domain-wall trapping. For metallic samples we find a magnetoresistance up to 8%, which can be understood from spin accumulation. In samples where, due to depletion at the constriction, a tunnel barrier is formed, we observe a magnetoresistance of up to 2000 %.
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