Quantum Hall Effect in a Two-Dimensional Electron System Bent by 90 Degrees
M. Grayson, D. Schuh, M. Bichler, G. Abstreiter, L. Hoeppel, J. Smet, K. von Klitzing
Abstract
Using a new MBE growth technique, we fabricate a two-dimensional electron system which is bent around an atomically sharp 90 degree corner. In the quantum Hall regime under tilted magnetic fields, we can measure equilibration between both co- and counter-propagating edge channels of arbitrary filling factor ratio. We present here 4-point magnetotransport characterization of the corner junction with filling factor combinations which can all be explained using the standard Landauer-Buttiker edge channel picture. The success of this description confirms the realization of a new type of quantum Hall edge geometry.
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