Quantum Hall Effect in a Two-Dimensional Electron System Bent by 90 Degrees
M. Grayson, D. Schuh, M. Bichler, G. Abstreiter, L. Hoeppel, J. Smet, K. von Klitzing
Abstract
Using a new MBE growth technique, we fabricate a two-dimensional electron system which is bent around an atomically sharp 90 degree corner. In the quantum Hall regime under tilted magnetic fields, we can measure equilibration between both co- and counter-propagating edge channels of arbitrary filling factor ratio. We present here 4-point magnetotransport characterization of the corner junction with filling factor combinations which can all be explained using the standard Landauer-Buttiker edge channel picture. The success of this description confirms the realization of a new type of quantum Hall edge geometry.
Create a lesson
Related papers
Coherent and ultra-low-power EDSR with a flopping-mode spin qubit in germanium
Alexei Orekhov, Wonjin Jang, Pan Zhang et al.
Disorder-induced modulation of the nonlinear Hall effect in Weyl semimetals
Juan A. Cañas, Daniel A. Bonilla, A. Martín-Ruiz
Coplanar Lateral Gating MoS2 on SrTiO3: A Unified Platform for Classical and Quantum Devices
Prasad Muragesh, Manav Murali, Venkatesha Modur Ramachandra et al.
Predictive Structure to Thermal Conductivity Modeling Framework for BEOL Interconnect Stacks in Advanced Technology Nodes Enabled by Extensive Layer Resolved Thermal Measurements
Zifeng Huang, Yiyang Sun, Tianyu Jia et al.
Plasmons in twisted bilayer graphene across dispersive and flat bands
Antonio Palamara, Michele Pisarra, Antonello Sindona
Highly uniform first-electron position in qubit arrays fabricated on dedicated QSOI(R) 300mm commercial platform
Johan Pelloux-Prayer, Elise Prin, Giselle A. Elbaz et al.