Group theoretical analysis of double acceptors in a magnetic field: identification of the Si:B+ ground state
G. D. J. Smit, S. Rogge, J. Caro, T. M. Klapwijk
Abstract
A boron impurity in silicon binding an extra hole is known to have only one bound state at an energy of just below 2 meV. The nature of the Si:B+ ground state is however not well established. We qualitatively analyze the behavior in a magnetic field of isolated acceptors in a tetrahedral lattice binding two holes using group theory. Applying these results, we analyze recent measurements and conclude that the ground state of B+ is most compatible with a non-degenerate Gamma1 state.
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