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Hall effect in cobalt-doped TiO2-δ

J. S. Higgins, S. R. Shinde, S. B. Ogale, T. Venkatesan, R. L. Greene

cond-matarXiv:cond-mat/0311041

Abstract

We report Hall effect measurements on thin films of cobalt-doped TiO2-δ. Films with low carrier concentrations (1018 - 1019) yield a linear behavior in the Hall data while those having higher carrier concentrations (1021 - 1022) display anomalous behavior near zero field. In the entire range of carrier concentration, n-type conduction is observed. The appearance of the anomalous behavior is accompanied by a possible structural change from rutile TiO2 to Ti[nO2n-1 Magneli phase(s).

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