Similarity of the 3.42 eV and near-band-edge 3.47 eV luminescence bands in GaN
T. V. Shubina, S. V. Ivanov, V. N. Jmerik, D. D. Solnyshkov, N. A. Cherkashin, P. S. Kop'ev, A. Vasson, J. Leymarie, K. F. Karlsson, P. O. Holtz, B. Monemar
Abstract
We demonstrate that the 3.42 eV photoluminescence (PL) band in GaN is of the same intrinsic origin as the near-edge 3.47 eV band, but arises from regions of inversed polarity characterized by different strain and growth rate. Two absorption edges are thermally detected at 0.35 K in nanocolumn structures, exhibiting both bands. Micro-PL studies have shown similar temperature/power behavior of these bands, with a competition in intensity in closely spaced spots accompanied by alterations of exciton level ordering. Strain-induced one-dimensional carrier confinement in small inversion domains likely explains the discrete narrow lines observed between the bands.
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