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Shot noise in resonant tunneling through a zero-dimensional state with a complex energy spectrum

A. Nauen, F. Hohls, J. Konemann, R. J. Haug

cond-mat.mes-hallarXiv:cond-mat/0402358

Abstract

We investigate the noise properties of a GaAs/AlGaAs resonant tunneling structure at bias voltages where the current characteristic is determined by single electron tunneling. We discuss the suppression of the shot noise in the framework of a coupled two-state system. For large bias voltages we observed super-Poissonian shot noise up to values of the Fano factor α≈ 10.

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