An Effective Reduction of Critical Current for Current-Induced Magnetization Switching by a Ru Layer Insertion in an Exchange-Biased Spin-Valve
Y. Jiang, S. Abe, T. Ochiai, T. Nozaki, A. Hirohata, N. Tezuka, K. Inomata
Abstract
Recently it has been predicted that a spin-polarized electrical current perpendicular-to-plane (CPP) directly flowing through a magnetic element can induce magnetization switching through spin-momentum transfer. In this letter, the first observation of current-induced magnetization switching (CIMS) in exchange-biased spin-valves (ESPVs) at room temperature is reported. The ESPVs show the CIMS behavior under a sweeping dc current with a very high critical current density. It is demonstrated that a thin Ruthenium (Ru) layer inserted between a free layer and a top electrode effectively reduces the critical current densities for the CIMS. An "inverse" CIMS behavior is also observed when the thickness of the free layer increases.
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