Rigorous Born Approximation and beyond for the Spin-Boson Model
D. P. DiVincenzo, D. Loss
Abstract
Within the lowest-order Born approximation, we present an exact calculation of the time dynamics of the spin-boson model in the ohmic regime. We observe non-Markovian effects at zero temperature that scale with the system-bath coupling strength and cause qualitative changes in the evolution of coherence at intermediate times of order of the oscillation period. These changes could significantly affect the performance of these systems as qubits. In the biased case, we find a prompt loss of coherence at these intermediate times, whose decay rate is set by α, where α is the coupling strength to the environment. We also explore the calculation of the next order Born approximation: we show that, at the expense of very large computational complexity, interesting physical quantities can be rigorously computed at fourth order using computer algebra, presented completely in an accompanying Mathematica file. We compute the O(α) corrections to the long time behavior of the system density matrix; the result is identical to the reduced density matrix of the equilibrium state to the same order in α. All these calculations indicate precision experimental tests that could confirm or refute the validity of the spin-boson model in a variety of systems.
Create a lesson
Related papers
Hall-Density Collapse as Direct Evidence for Percolative Conduction Onset in Monolayer MoS2 Transistors
R. V. Upadya, M. Introna, X. Wu et al.
Spin swapping mediated by spin-orbital textures in centrosymmetric multiorbital materials
Chengyuan Cai, Hanchen Wang, Rui-Chun Xiao et al.
Electrostatics of Chern junctions in a magnetic field
Robin Durand, Pascal Simon, Ion Garate
Spin Simulators based on Exciton-Polariton Waveguide Networks
Kevin Dini, Simone Zanotti, Timothy C. H. Liew
The quantized Hall effect knows which way the current flows: mirror covariance and rectification in a laterally asymmetric Hall bar
A. Siddiki
Floquet-Volkov spin polarization in spin-degenerate Antiferromagnets
Jiyang Fan, Dinghui Wang, Tongshuai Zhu