Photoluminescence measurements in Be-delta-doped back-gate induced quantum well
M. Yamaguchi, S. Nomura, D. Sato, T. Akazaki, H. Tamura, H. Takayanagi
Abstract
The photoluminescence (PL) spectra of a two-dimensional electron system induced in a Be-delta-doped GaAs/AlGaAs quantum well (QW) with a back gate are measured. The electron density is controlled from 1 X 109 cm-2 to 2.5 X 1011 cm-2 by changing the back gate voltage. There is a linear increase in the acceptor PL spectrum around 1.49 eV with an increase in the back gate voltage and the PL disappears from the exciton bound to neutral donors (D0X) around 1.51 eV at 1.2 X 1010 cm-2.
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