Post-growth annealing of GaMnAs under As capping - an alternative way to increase Tc
M. Adell, V. Stanciu, J. Kanski, L. Ilver, J. Sadowski, J. Z. Domagala, P. Svedlindh, F. Terki, C. Hernandez, S. Charar
Abstract
We demonstrate that in situ post-growth annealing of GaMnAs layers under As capping is adequate for achieving high Curie temperatures (Tc) in a similar way as ex situ annealing in air or in N2 atmosphere practiced earlier.
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