Piezo-Magneto-Electric Effects in p-Doped Semiconductors
B. Andrei Bernevig, Oskar Vafek
Abstract
We predict the appearance of a uniform magnetization in strained three dimensional p-doped semiconductors with inversion symmetry breaking subject to an external electric field. We compute the magnetization response to the electric field as a function of the direction and magnitude of the applied strain. This effect could be used to manipulate the collective magnetic moment of hole mediated ferromagnetism of magnetically doped semiconductors.
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