Broken Symmetry and Coherence of Molecular Vibrations in Tunnel Transitions
Alexander M. Dykhne, Alexander G. Rudavets
Abstract
We examine the Breit-Wigner resonances that ensue from field effects in molecular single electron transistors (SETs). The adiabatic dynamics of a quantum dot elastically attached to electrodes are treated in the Born-Oppenheimer approach. The relation between thermal and shot noise induced by the source-drain voltage Vbias is found when the SET operates in a regime tending to thermodynamic equilibrium far from resonance. The equilibration of electron-phonon subsystems produces broadening and doublet splitting of transparency resonances helping to explain a negative differential resistance (NDR)of current versus voltage (I-V) curves. Mismatch between the electron and phonon temperatures brings out the bouncing-ball mode in the crossover regime close to the internal vibrations mode. The shuttle mechanism occurs at a threshold Vbias of the order of the Coulomb energy Uc. An accumulation of charge is followed by the Coulomb blockade and broken symmetry of a single or double well potential. The Landau bifurcation cures the shuttling instability and the resonance levels of the quantum dot become split because of molecular tunneling. We calculate the tunnel gaps of conductivity and propose a tunneling optical trap (TOT) for quantum dot isolation permitting coherent molecular tunneling by virtue of Josephson oscillations in a charged Bose gas. We discuss experimental conditions when the above theory can be tested.
Create a lesson
Related papers
Coherent and ultra-low-power EDSR with a flopping-mode spin qubit in germanium
Alexei Orekhov, Wonjin Jang, Pan Zhang et al.
Disorder-induced modulation of the nonlinear Hall effect in Weyl semimetals
Juan A. Cañas, Daniel A. Bonilla, A. Martín-Ruiz
Coplanar Lateral Gating MoS2 on SrTiO3: A Unified Platform for Classical and Quantum Devices
Prasad Muragesh, Manav Murali, Venkatesha Modur Ramachandra et al.
Predictive Structure to Thermal Conductivity Modeling Framework for BEOL Interconnect Stacks in Advanced Technology Nodes Enabled by Extensive Layer Resolved Thermal Measurements
Zifeng Huang, Yiyang Sun, Tianyu Jia et al.
Plasmons in twisted bilayer graphene across dispersive and flat bands
Antonio Palamara, Michele Pisarra, Antonello Sindona
Highly uniform first-electron position in qubit arrays fabricated on dedicated QSOI(R) 300mm commercial platform
Johan Pelloux-Prayer, Elise Prin, Giselle A. Elbaz et al.