Effect of Ga+ irradiation on magnetic and magnetotransport properties in (Ga,Mn)As epilayers
H. Kato, K. Hamaya, Y. Kitamoto, T. Taniyama, H. Munekata
Abstract
We report on the magnetic and magnetotransport properties of ferromagnetic semiconductor (Ga,Mn)As modified by Ga+ ion irradiation using focused ion beam. A marked reduction in the conductivity and the Curie temperature is induced after the irradiation. Furthermore, an enhanced negative magnetoresistance (MR) and a change in the magnetization reversal process are also demonstrated at 4 K. Raman scattering spectra indicate a decrease in the concentration of hole carriers after the irradiation, and a possible origin of the change in the magnetic properties is discussed.
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