Spin dependent transport in ferromagnetic/superconductor/ferromagnetic single electron transistor
Dawei Wang, Jia G. Lu
Abstract
Ferromagnetic single electron transistors with Al islands and orthogonal ferromagnetic leads (Co) are fabricated using ebeam lithography followed by shadow evaporation techniques. I-V characteristics exhibit typical single electron tunneling effects. Transport measurements performed in external magnetic field show that, when the two ferromagnetic leads are in antiparallel configuration, spin imbalance leads to a suppression of superconductivity.
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