Molecular-beam epitaxy of (Zn,Mn)Se on Si(100)
T. Slobodskyy, C. Rüster, R. Fiederling, D. Keller, C. Gould, W. Ossau, G. Schmidt, L. W. Molenkamp
Abstract
We have investigated the growth by molecular-beam epitaxy of the II-VI diluted magnetic semiconductor (Zn,Mn)Se on As-passivated Si(100) substrates. The growth start has been optimized by using low-temperature epitaxy. Surface properties were assessed by Nomarski and scanning electron microscopy. Optical properties of (Zn,Mn)Se have been studied by photoluminescence and a giant Zeeman splitting of up to 30 meV has been observed. Our observations indicate a high crystalline quality of the epitaxial films.
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