Probability of the resistive state formation caused by absorption of a single-photon in current-carrying superconducting nano-strips
Alexei Semenov, Andreas Engel, Heinz-Wilhelm Hübers, Konstantin Ilin, Michael Siegel
Abstract
We have studied supercurrent-assisted formation of the resistive state in nano-structured Nb and NbN superconducting films after absorption of a single photon. In amorphous narrow NbN strips the probability of the resistive state formation has a pronounced spectral cut-off. The corresponding threshold photon energy decreases with the bias current. Analysis of the experimental data in the framework of the generalized hot-spot model suggests that the quantum yield for near-infrared photons increases faster than the photon nergy. Relaxation of the resistive state depends on the photon energy making the phenomenon feasible for the development of energy resolving single-photon detectors.
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