Spin injection from the Heusler alloy Co2MnGe into Al0.1Ga0.9As/GaAs heterostructures
X. Y. Dong, C. Adelmann, J. Q. Xie, C. J. Palmstrom, X. Lou, J. Strand, P. A. Crowell, J. -P. Barnes, A. K. Petford-Long
Abstract
Electrical spin injection from the Heusler alloy Co2MnGe into a p-i-n Al0.1Ga0.9As/GaAs light emitting diode is demonstrated. A maximum steady-state spin polarization of approximately 13% at 2 K is measured in two types of heterostructures. The injected spin polarization at 2 K is calculated to be 27% based on a calibration of the spin detector using Hanle effect measurements. Although the dependence on electrical bias conditions is qualitatively similar to Fe-based spin injection devices of the same design, the spin polarization injected from Co2MnGe decays more rapidly with increasing temperature.
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