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Radiation-induced zero-resistance states with resolved Landau levels

R. G. Mani

cond-mat.mes-hallarXiv:cond-mat/0501091

Abstract

The microwave-photoexcited high mobility GaAs/AlGaAs two-dimensional electron system exhibits an oscillatory-magnetoresistance with vanishing resistance in the vicinity of magnetic fields B = [4/(4j+1)] Bf, where Bf = 2πfm*/e, m* is an the effective mass, e is the charge, f is the microwave frequency, and j =1,2,3... Here, we report transport with well-resolved Landau levels, and some transmission characteristics.

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