Spin-dependent resistivity at transitions between integer quantum Hall states
K. Vakili, Y. P. Shkolnikov, E. Tutuc, N. C. Bishop, E. P. De Poortere, M. Shayegan
Abstract
The longitudinal resistivity at transitions between integer quantum Hall states in two-dimensional electrons confined to AlAs quantum wells is found to depend on the spin orientation of the partially-filled Landau level in which the Fermi energy resides. The resistivity can be enhanced by an order of magnitude as the spin orientation of this energy level is aligned with the majority spin. We discuss possible causes and suggest a new explanation for spike-like features observed at the edges of quantum Hall minima near Landau level crossings.
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