Resonant tunneling in short Josephson SFS junctions
Z. Radović, I. Petković, N. M. Chtchelkatchev
Abstract
Josephson effect in short ballistic SINIS and SIFIS double-tunnel junctions, consisting of clean superconductors (S), a normal metal (N) or metallic ferromagnet (F), and insulating interfaces (I) is studied. For SINIS double-tunnel junctions, sharp peaks in the critical Josephson current as a function of the junction width result from the resonant amplification of the Andreev process when the quasi-bound states enter the superconducting gap. For SIFIS double-tunnel junctions spin split quasi-bound states partially amplify the supercurrent and trigger the transitions between 0 and π states of the junction. Instead of the critical current reaching a peak value (which happens when the Andreev states cross the Fermi surface in SINIS junctions), a narrow dip opens up exactly at the peak due to the compensation of partial currents flowing in opposite directions. This is related to the spin polarization of Andreev states and explains the coexistence of stable and metastable 0 and π states in the vicinity of the transition. With increased barrier transparency, the described mechanism of 0-π transitions is modified by the broadening and overlapping of quasi-bound states (transmission resonances). Temperature-induced transitions both from 0 to π and from π to 0 states are studied by computing the phase diagram (temperature vs. junction width) for different interfacial transparencies varying from metallic (transparent) to the tunnel limit.
Create a lesson
Related papers
ConvexAD: differentiable phase retrieval with geometric regularization for high-strain, low-signal Bragg coherent diffraction imaging
Matteo Masto, Ewen Bellec, Etienne Polack et al.
Symmetry-protected isolation of the quantum metric in chiral type-II semi-Dirac semimetals
Wen-Hao Bian, Jing Wang
Torsion, valley holonomy, and Berry phases of quasiparticles encircling dislocations and defect complexes in graphene
G. Q. Garcia, A. M. de M. Carvalho, C. Furtado
Field-free transverse response in altermagnet and topological insulator heterojunctions
Bijay Kumar Sahoo, Abhiram Soori
Nonlinearity-Induced Suppression of Dissipation in Bath-Coupled Floquet Topological Insulators
Bhoomija Chaurasia, Sebabrata Mukherjee
Dissipationless valley diode effects in Kekulé graphene superlattices
W. Zeng