Detection of Single Electron Charging in an Individual InAs Quantum Dot by Noncontact Atomic Force Microscopy
Romain Stomp, Yoichi Miyahara, Sacha Schaer, Qingfeng Sun, Hong Guo, Peter Grutter, Sergei Studenikin, Philip Poole, Andy Sachrajda
Abstract
Single electron charging in an individual InAs quantum dot was observed by electrostatic force measurements with an atomic force microscope (AFM). The resonant frequency shift and the dissipated energy of an oscillating AFM cantilever were measured as a function of the tip-back electrode voltage and the resulting spectra show distinct jumps when the tip was positioned above the dot. The observed jumps in the frequency shift, with corresponding peaks in dissipation, are attributed to a single electron tunneling between the dot and the back electrode governed by Coulomb blockade effect, and are consistent with a model based on the free energy of the system. The observed phenomenon may be regarded as the ``force version'' of the Coulomb blockade effect.
Create a lesson
Related papers
Ferron polariton Hall effect: Deflecting optically rectified polarization with magnetic fields
Omer Yaniv, Dominik M. Juraschek
Band structure of two-dimensional graphene and of one-dimensional nanoribbons via variational quantum algorithms: from energies to wavefunction quality
Raúl Medrano Millán, Rodrigo Gil-Merino y Rubio, Juan Borge et al.
Aging-Improved NH3 Sensing in Polypyrrole Nanotube Chemiresistors
Arya Mohan, Olivia Kamdom, Antoine Enel et al.
Effect of molybdenum content on phase transformations during continuous heating of metastable β Ti-Mo alloys
Veronika Kočiščáková, Anna Veverková, Josef Stráský et al.
Controlling nitrogen incorporation in (Eu,Ba,Ca)TiO3-derived perovskite-type oxynitrides through Fermi Level Engineering
Margarida Barroso, Marie Neumann, Rachele Sciotto et al.
Effect of compensation on magnetic ordering in (Ga,Mn)As
I. A. Kokurin, N. S. Averkiev