SET Backaction on the Single Electron Box
B. A. Turek, K. W. Lehnert, A. Clerk, D. Gunnarsson, K. Bladh, P. Delsing, R. J. Schoelkopf
Abstract
We report an experimental observation of the backaction of a Single Electron Transistor (SET) measuring the Coulomb staircase of a single electron box. As current flows through the SET, the charge state of the SET island fluctuates. These fluctuations capacitively couple to the box and cause changes in the position, width, and asymmetry of the Coulomb staircase. A sequential tunnelling model accurately recreates these effects, confirming this mechanism of the backaction of an SET. This is a first step towards understanding the effects of quantum measurement on solid state qubits.
Create a lesson
Related papers
ConvexAD: differentiable phase retrieval with geometric regularization for high-strain, low-signal Bragg coherent diffraction imaging
Matteo Masto, Ewen Bellec, Etienne Polack et al.
Symmetry-protected isolation of the quantum metric in chiral type-II semi-Dirac semimetals
Wen-Hao Bian, Jing Wang
Torsion, valley holonomy, and Berry phases of quasiparticles encircling dislocations and defect complexes in graphene
G. Q. Garcia, A. M. de M. Carvalho, C. Furtado
Field-free transverse response in altermagnet and topological insulator heterojunctions
Bijay Kumar Sahoo, Abhiram Soori
Nonlinearity-Induced Suppression of Dissipation in Bath-Coupled Floquet Topological Insulators
Bhoomija Chaurasia, Sebabrata Mukherjee
Dissipationless valley diode effects in Kekulé graphene superlattices
W. Zeng