Self Assembled II-VI Magnetic Quantum Dot as a Voltage-Controlled Spin-Filter
C. Gould, A. Slobodskyy, T. Slobodskyy, P. Grabs, D. Supp, P. Hawrylak, F. Qu, G. Schmidt, L. W. Molenkamp
Abstract
A key element in the emergence of a full spintronics technology is the development of voltage controlled spin filters to selectively inject carriers of desired spin into semiconductors. We previously demonstrated a prototype of such a device using a II-VI dilute-magnetic semiconductor quantum well which, however, still required an external magnetic field to generate the level splitting. Recent theory suggests that spin selection may be achievable in II-VI paramagnetic semiconductors without external magnetic field through local carrier mediated ferromagnetic interactions. We present the first experimental observation of such an effect using non-magnetic CdSe self-assembled quantum dots in a paramagnetic (Zn,Be,Mn)Se barrier.
Create a lesson
Related papers
ConvexAD: differentiable phase retrieval with geometric regularization for high-strain, low-signal Bragg coherent diffraction imaging
Matteo Masto, Ewen Bellec, Etienne Polack et al.
Symmetry-protected isolation of the quantum metric in chiral type-II semi-Dirac semimetals
Wen-Hao Bian, Jing Wang
Torsion, valley holonomy, and Berry phases of quasiparticles encircling dislocations and defect complexes in graphene
G. Q. Garcia, A. M. de M. Carvalho, C. Furtado
Field-free transverse response in altermagnet and topological insulator heterojunctions
Bijay Kumar Sahoo, Abhiram Soori
Nonlinearity-Induced Suppression of Dissipation in Bath-Coupled Floquet Topological Insulators
Bhoomija Chaurasia, Sebabrata Mukherjee
Dissipationless valley diode effects in Kekulé graphene superlattices
W. Zeng