Anharmonicity and asymmetry of Landau levels for a two-dimensional electron gas
Stephane Bonifacie, Christophe Chaubet, Benoit Jouault, Andre Raymond
Abstract
We calculate the density of states of a two dimensional electron gas located at the interface of a GaAlAs/GaAs heterojunction. The disorder potential which is generally created by a single doping layer behind a spacer, is here enhanced by the presence of a second delta doped layer of scatterers which can be repulsive or attractive impurities. We have calculated the density of states by means of the Klauder's approximation, in the presence of a magnetic field of arbitrary strength. At low field either band tails or impurity bands are observed for attractive potentials, depending on the impurity concentration. At higher field, impurity bands are observed for both repulsive and attractive potentials. We discuss the effect of such an asymmetrical density of states on the transport properties in the quantum Hall effect regime.
Create a lesson
Related papers
Parametric Glassiness in Graphene-based Electronic Lévy Glass
Caue N. da Silva, Diego B. Fonseca, Adauto J. F. de Souza et al.
Giant geometric nonlinear transport in inhomogeneously strained Bi2Se3 single crystalline slabs
Igor Veremchuk, Pavlo Makushko, Anita Guarino et al.
Controlling the Atomic Reconstruction in Twisted MoSe2/WSe2 with a Monolayer hBN Spacer
Johannes Figueiredo, Kaiyuan Chen, Aubrey Penn et al.
Pulse-by-pulse imaging of reversible, collective reshaping in laser-excited gold nanorods
Mees Dieperink, Loriane Monin, Ichiro Ohnishi et al.
Atomic Edge Resonators Flatten Phonon Bands in Biphenylene Nanoribbons
V. L. Katkov, N. M. Chtchelkatchev, V. A. Osipov
Theory of exciton-exciton interactions in crystalline systems
L. Maisel Licerán, H. T. C. Stoof