Spatial structure of Mn-Mn acceptor pairs in GaAs
A. M. Yakunin, A. Yu. Silov, P. M. Koenraad, J. -M. Tang, M. E. Flatté, W. Van Roy, J. De Boeck, J. H. Wolter
Abstract
The local density of states of Mn-Mn pairs in GaAs is mapped with cross-sectional scanning tunneling microscopy and compared with theoretical calculations based on envelope-function and tight-binding models. These measurements and calculations show that the crosslike shape of the Mn-acceptor wavefunction in GaAs persists even at very short Mn-Mn spatial separations. The resilience of the Mn-acceptor wave-function to high doping levels suggests that ferromagnetism in GaMnAs is strongly influenced by impurity-band formation. The envelope-function and tight-binding models predict similarly anisotropic overlaps of the Mn wave-functions for Mn-Mn pairs. This anisotropy implies differing Curie temperatures for Mn δ-doped layers grown on differently oriented substrates.
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