Charged exciton emission at 1.3 μm from single InAs quantum dots grown by metalorganic chemical vapor deposition
N. I. Cade, H. Gotoh, H. Kamada, T. Tawara, T. Sogawa, H. Okamoto, H. Nakano
Abstract
We have studied the emission properties of self-organized InAs quantum dots (QDs) grown in an InGaAs quantum well by metalorganic chemical vapor deposition. Low-temperature photoluminescence spectroscopy shows emission from single QDs around 1300 nm; we clearly observe the formation of neutral and charged exciton and biexciton states, and we obtain a biexciton binding energy of 3.1 meV. The dots exhibit an s-p shell splitting of approximately 100 meV, indicating strong confinement.
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