Excitons, biexcitons and trions in self-assembled (In,Ga)As/GaAs quantum dots: Recombination energies, polarization and radiative lifetimes versus dot height

Abstract

We calculate the height dependence of recombination energies, polarization and radiative lifetimes of the optical transitions of various excitonic complexes: neutral excitons (X0), negatively- (X-) and positively-charged (X+) trions, and biexcitons (XX0) in lens-shaped, self-assembled In0.6Ga0.4As/GaAs quantum dots. By using an atomistic pseudopotential method combined with the configuration-interaction method, we predict the following. (i) The recombination energy of the lowest transition of X- blue-shifts as height increases, whereas that of X+ red-shifts. Remarkably, the recombination of XX0 shows a red-shift at small heights, reaches a maximum shift, and then blue-shifts for taller dots. (ii) Changes in dot height lead to a bound-to-unbound crossover for X-, X+ and XX0. (iii) When considering the [110] and [110] directions, the lowest transitions of X0 and XX0 manifest [110] vs [110] in-plane polarization anisotropy that switches sign as a function of height as well as alloy randomness. X- and X+ show transitions with negligible polarization anisotropy regardless of height. (iv) The ground state of X0 is split in a low-energy pair that is forbidden (dark) and a high-energy pair that is allowed; thus, at T=0K the radiative lifetime τ(X0) is long (~ ms) due to the dark exciton. On the other hand, at T=10K, τ(X0) decreases moderately as height increases and its magnitude ranges from 2-3ns. The ground state of X- and X+, and that of XX0 is allowed (bright); so, τ(X-), τ(X+) and τ(XX0) are fast (~ ns) even at T=0K. These radiative lifetimes depend weakly on height. In addition, τ(X-) ~ τ(X+) ~1.1ns, while τ(XX0)~0.5ns$. We compare our predictions with available spectroscopic data.

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