New phases in the Ba-Ce(M)-O systems (M = Ga, In)
N. I. Matskevich, T. I. Chupahina, G. V. Bazuev, F. A. Kuznetsov
Abstract
A new and known barium cerates doped by In and Ga were synthesized in air at 1700 K. The synthesis was performed by solid state reactions from BaCO3, CeO2, In2O3 or Ga2O3. X-ray diffraction profiles of the powdered samples were obtained with DRON-UM-1 and STADI-P diffractometers using monochromatized CuKa radiation. The following compositions of new phases were obtained: BaCe1-xGaxO3-d (x = 0.05; 0.1) and BaCe1-xInxO3-d (x = 0.25, 0.5). They crystallize in the orthorhombic space group Pnma. The lattice parameters were calculated by full profile Rietveld method. Based on analysis of literature data it was possible to assume that increasing of tolerance factors from BaCeO3 up to BaCe1-xGaxO3-d (BaCe1-xInxO3-d) led to the increasing of stability and transport properties of Ga and In doped barium cerates.
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