Influence of layer defects on the damping in ferroelectric thin films
J. M. Wesselinowa, T. Michael, S. Trimper, K. Zabrocki
Abstract
A Green's function technique for a modified Ising model in a transverse field is applied, which allows to calculate the damping of the elementary excitations and the phase transition temperature of ferroelectric thin films with structural defects. Based on an analytical expression for the damping function, we analyze its dependence on temperature, film thickness and interaction strength numerically. The results demonstrate that defect layers in ferroelectric thin films, layers with impurities or vacancies as well as layers with dislocations are able to induce a strong increase of the damping due to different exchange interactions within the defect layers. The results are in good agreement with experimental data for thin ferroelectric films with different thickness.
Create a lesson
Related papers
Dynamically Reentrant Skyrmion Phase in Oscillating Magnetic Fields
Z. Demir Vatansever, E. Vatansever, A. Vasilopoulos et al.
Mutual linearity in semi-Markov networks
Julian B. Voits, Ulrich S. Schwarz
Steady states in asymmetric exclusion processes with reactions: Fluctuations and non-mean field behaviour
Rohn Chatterjee, Atri Goswami, Sudip Mukherjee
Marginal Operator Deformations and Pseudocriticality in Baxter--Wu Models
Hyun-Yong Lee, Naoki Kawashima, Nikolaos G. Fytas et al.
Kardar--Parisi--Zhang density hydrodynamics in a coherent XXZ--ASEP Lindbladian
Yansheng Liu, Daoguang Li, Kaixiang Lu et al.
Brownian gyrator model with stochastic resetting
Satya N. Majumdar, Gregory Schehr, Pascal Viot et al.