Magnetic field dependence of conductivity and effective mass of carriers in a model of Mott-Hubbard material
L. Didukh, O. Kramar, Yu. Skorenkyy, Yu. Dovhopyaty
Abstract
The influence of external magnetic field h on a static conductivity of Mott-Hubbard material which is described by model with correlated hopping of electrons has been investigated. By means of canonical transformation the effective Hamiltonian which takes into account strong intra-site Coulomb repulsion and correlated hopping is obtained. Using a variant of generalized Hartree-Fock approximation the single-electron Green function and quasiparticle energy spectrum of the model have been calculated. The static conductivity σ has been calculated as a function of h, electron concentration n and temperature T. The correlated hopping is shown to cause the electron-hole asymmetry of transport properties of narrow band materials.
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