Full Counting Statistics for a Single-Electron Transistor, Non-equilibrium Effects at Intermediate Conductance
Yasuhiro Utsumi, Dmitri S. Golubev, Gerd Schön
Abstract
We evaluate the current distribution for a single-electron transistor with intermediate strength tunnel conductance. Using the Schwinger-Keldysh approach and the drone (Majorana) fermion representation we account for the renormalization of system parameters. Nonequilibrium effects induce a lifetime broadening of the charge-state levels, which suppress large current fluctuations.
Create a lesson
Related papers
Multi-Channel Non-Abelian Edge Pumping via Multi-Degeneracy Encircling
Qingyang Mo, Jiacheng Sun, Zhongfu Li et al.
Ultrafast Moiré Exciton Dynamics Revealed by Two-Dimensional Coherent Spectroscopy
Deran Zhang, Zhexue Chen, Dongxue Chen et al.
Probing Non-Abelian Topology through Quench Dynamics
Zhenming Zhang, Tianyu Li, Wei Yi
Supermoiré Formation and Robust Topological Edge State in Helical Trilayer Graphene
Hong Li, Huandong Chen, Seongyeon Youn et al.
Prediction of antimagnon-polarons with intrinsic momentum-space level attraction
Chongzhou Wang, Zhengda Jing, Weichao Yu
Parity-Selective Quantum Interference in Unconventional Magnets
Yiyuan Chen, Xiao-Bin Qiang, Hai-Zhou Lu et al.