Observation of one electron charge in an enhancement-mode InAs single electron transistor at 4.2K
G. M. Jones, B. H. Hu, C. H. Yang, M. J. Yang, Y. B. Lyanda-Geller
Abstract
We propose and demonstrate experimentally a novel design of single-electron quantum dots. The structure consists of a narrow band gap quantum well that can undergo a transition from the hole accumulation regime to the electron inversion regime in a single-top-gate transistor configuration. We have observed large size quantization and Coulomb charging energies over 10meV. This quantum dot design can be especially important for scalable quantum computing.
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