Alloy disorder effects on the room temperature optical properties of GaInNAs quantum wells

Abstract

The effect of alloy disorder on the optical density of states and the average room temperature carrier statistics in GaInNAs quantum wells is discussed. A red shift between the peak of the room temperature photoluminescence and the surface photovoltage spectra, that systematically increases with the nitrogen content within the quantum wells is observed. The relationship between this Stokes' shift and the absorption linewidth in different samples suggests that the photoexcited carriers undergo a continuous transition, from being in quasi-thermal equilibrium with the lattice to being completely trapped by the quantum dot-like potential fluctuations, as the nitrogen fraction in the alloy is increased. The values of the 'electron temperature' inferred from the photoluminescence spectra are found to be consistent with this interpretation.