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Upper critical field from normal state fluctuations in Bi2Sr2CuO6+δ

F. Bouquet, L. Fruchter, I. Sfar, Z. Z. Li, H. Raffy

cond-mat.supr-conarXiv:cond-mat/0512093

Abstract

The in-plane magnetoresistance of an epitaxial Bi2Sr2CuO6+δ thin film was systematically investigated as a function of doping, above Tc. The orbital magnetoconductance is used to extract the crossover field line Hc2*(T) in the fluctuation regime. This field is found in good agreement with the upper critical field obtained from resistivity data below Tc, and exhibits a similar upward curvature, thus pointing toward the existence of a critical correlation length. The consequences regarding the nature of the resistive transition are discussed.

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