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Electric Conductivity of the Zero-gap Semiconducting State in Alpha-(BEDT-TTF)2I3 Salt

Shinya Katayama, Akito Kobayashi, Yoshikazu Suzumura

cond-mat.mtrl-sciarXiv:cond-mat/0601070

Abstract

The electric conductivity which reveals the zero gap semiconducting (ZGS) state has been investigated as the function of temperature T and life time τ in order to understand the ZGS state in quarter-filled α-(BEDT-TTF)2I3 salt with four sites in the unit cell. By treating τ as a parameter and making use of the one-loop approximation, it is found that the conductivity is proportional to T and τ for kB/τ and independent of T and τ for kB T/τ. Further the conductivity being independent of T in the ZGS state is examined in terms of Born approximation for the impurity cattering.

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