Extended Huckel theory for bandstructure, chemistry and transport. I. Carbon Nanotubes
Diego Kienle, Jorge I. Cerda, Avik W. Ghosh
Abstract
We describe a semi-empirical atomic basis Extended Hückel Theoretical (EHT) technique that can be used to calculate bulk bandstructure, surface density of states, electronic transmission and interfacial chemistry of various materials within the same computational platform. We apply this method to study multiple technologically important systems, starting with carbon-nanotubes (CNT) and their interfaces in this paper, and silicon-based heterostructures in our follow-up paper. We find that when it comes to quantum transport through interesting, complex heterostructures, the Huckel bandstructure offers a fair and practical compromise between orthogonal tight-binding theories (OTB) with limited transferability between environments under large distortion, and density functional theories (DFT) that are computationally quite expensive for the same purpose.
Create a lesson
Related papers
Temperature dependence of the charge density from first principles: application to the (222) forbidden reflection in silicon
Jean Paul Nery, Raveena Gupta, Olle Hellman et al.
Coupled anisotropic weak topological states and Floquet mixed-parity altermagnetism in two-dimensional Su-Schrieffer-Heeger models
Kunyuan Feng, Xibin Liu, Chenchen Liu et al.
Grain Boundary Phase Transitions Enable Diffusionless Climb of Disconnections
Md Sharier Nazim, Giacomo Po, Nikhil Chandra Admal
3D Cloud Component Analysis of Atomic Structures
Pai Li
Benchmarking of Fast and Interpretable UF Machine Learning Potentials
Pawan Prakash, Sam Dong, Richard G. Hennig
Grain-Boundary Premelting in High-Entropy Transition Metal Carbides
Marium M. Mou, Caleb Schenck, Samuel E. Daigle et al.