Effect of silver doping on the electrical properties of a-Sb2Se3
Abstract
This paper reports the effect of Ag-doping on electrical properties of a-Sb2Se3 in the temperature range 240-340 K and frequency range 5 Hz to 100 kHz. The variation of transport properties with thermal doping has been studied. Ag-doping produced two homogeneous phases in the sample and which are found to be voltage dependent in the temperature range studied and frequency dependent in lower frequency region (0.1 - 10 kHz). Activation energy Eg and C' [=σ0 exp (γ/k), where γ, is the temperature coefficient of the band gap] calculated from dc conductivity has been found to vary from 0.42 eV to 0.26 eV and 41.08x10-6 to 2.902x10-6 -1cm-1 respectively. Ag-doping can be used to make the sample more useful in device applications.
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