Giant optical birefringence of semiconductor nanowire metamaterials
Otto L. Muskens, Maarten H. M. van Weert, Magnus T. Borgstrom, Erik P. A. M. Bakkers, Jaime Gomez Rivas
Abstract
Semiconductor nanowires exhibit large polarization anisotropy for the absorption and emission of light, making them ideal building blocks for novel photonic metamaterials. Here, we demonstrate that a high density of aligned nanowires exhibits giant optical birefringence, a collective phenomenon observable uniquely for collections of wires. The nanowire material was grown on gallium phosphide (GaP) (111) in the form of vertically standing GaP nanowires. We obtain the largest optical birefringence to date, with a difference between the in-plane and out-of-plane refractive indices of 0.80 and a relative birefringence of 43%. These values exceed by a factor of 75 the natural birefringence of quartz and a by more than a factor of two the highest values reported so far in other artificial materials. By exploiting the specific crystallographic growth directions of the nanowires on the substrate, we further demonstrate full control over the orientation of the optical birefringence effect in the metamaterial.
Create a lesson
Related papers
Ferron polariton Hall effect: Deflecting optically rectified polarization with magnetic fields
Omer Yaniv, Dominik M. Juraschek
Band structure of two-dimensional graphene and of one-dimensional nanoribbons via variational quantum algorithms: from energies to wavefunction quality
Raúl Medrano Millán, Rodrigo Gil-Merino y Rubio, Juan Borge et al.
Aging-Improved NH3 Sensing in Polypyrrole Nanotube Chemiresistors
Arya Mohan, Olivia Kamdom, Antoine Enel et al.
Effect of molybdenum content on phase transformations during continuous heating of metastable β Ti-Mo alloys
Veronika Kočiščáková, Anna Veverková, Josef Stráský et al.
Controlling nitrogen incorporation in (Eu,Ba,Ca)TiO3-derived perovskite-type oxynitrides through Fermi Level Engineering
Margarida Barroso, Marie Neumann, Rachele Sciotto et al.
Effect of compensation on magnetic ordering in (Ga,Mn)As
I. A. Kokurin, N. S. Averkiev