The short-range correlations of a doped Mott insulator
Tiago C. Ribeiro
Abstract
This paper presents numerical studies of the single hole tt't''J model that address the interplay between the kinetic energy of itinerant electrons and the exchange energy of local moments as of interest to doped Mott insulators. Due to this interplay, two different spin correlations coexist around a mobile vacancy. These local correlations provide an effective two-band picture that explains the two-band structure observed in various theoretical and experimental studies, the doping dependence of the momentum space anisotropic pseudogap phenomena and the asymmetry between hole and electron doped cuprates.
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