Spin-dependent transport in the p-type ultra-narrow silicon quantum well
N. T. Bagraev, M. I. Bovt, W. Gehlhoff, O. N. Guimbitskaya, L. E. Klyachkin, A. M. Malyarenko, V. A. Mashkov, V. V. Romanov, S. A. Rykov
Abstract
We present the findings of the spin-dependent transport of the 2D holes in the p-type ultra-narrow self-assembled silicon quantum well (Si-QW) confined by the superconductor barriers on the n-type Si (100) surface. The Aharonov-Casher conductance oscillations caused by the Rashba spin-orbit interaction are found to interplay with the quantization phenomena induced by the creation of the two-dimensional subbands in Si-QW and the quantum subbands due to the Andreev reflection from the superconductor barriers.
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