Single-particle states in spherical Si/SiO2 quantum dots
Abstract
We calculate ground and excited electron and hole levels in spherical Si quantum dots inside SiO2 in a multiband effective mass approximation. Luttinger Hamiltonian is used for holes and the strong anisotropy of the conduction electron effective mass in Si is taken into account. As boundary conditions for electron and hole wave functions we use continuity of the wave functions and the velocity density at the boundary of the quantum dots.
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