Interface Magnetoresistance in Manganite-Titanate Heterojunctions
T. Susaki, N. Nakagawa, H. Y. Hwang
Abstract
We have found that the current- voltage characteristics of La0.7Sr0.3MnO3(-delta)/Nb:SrTiO3 rectifying junctions are quantitatively well-described by (thermally-assisted) tunneling with an effectively temperature-independent Schottky barrier under no magnetic field, while those of the oxygen deficient junction remarkably deviate from such a simple behavior as magnetic field is applied. These results indicate a new form of magnetoresistance arising from magnetic field changes of the interface band diagram via the strong electron-spin coupling in manganites.
Create a lesson
Related papers
Metallogenic quantum criticality: Fermi surface nucleation at transitions between gapped phases
Zhengyan Darius Shi
Exact Stiffness and Dynamical Responses from Fock-Space Fragmentation
Jonah Herzog-Arbeitman, Eslam Khalaf, Zhaoyu Han
A continuous confinement-deconfinement transition in a triangular quantum magnet
Suguru Hosoi, Sejun Park, Michihiro Hirata et al.
Multi-orbital physics in inverse Lieb lattice altermagnets
Mercè Roig, Jannik Gondolf, Andreas Kreisel et al.
3D- (H-theta-phi) magnetic phase diagram of antiferromagnetic metal GdB6 with electron and lattice instability
A. N. Azarevich, A. V. Bogach, T. F. Garipova et al.
Interlayer-engineering of Charge Order Wave Vector in Kagome Metals
Muntafa M. Mahi, Quazi D. M. Khosru, M. Zahid Hasan et al.