Unconventional resistivity at the border of metallic antiferromagnetism in NiS2
P. G. Niklowitz, M. J. Steiner, G. G. Lonzarich, D. Braithwaite, G. Knebel, J. Flouquet, J. A. Wilson
Abstract
We report low-temperature and high-pressure measurements of the electrical resistivity ρ(T) of the antiferromagnetic compound NiS2 in its high-pressure metallic state. The form of ρ(T) suggests that metallic antiferromagnetism in NiS2 is quenched at a critical pressure pc=76+-5 kbar. Near pc the temperature variation of ρ(T) is similar to that observed in NiS2-xSex near the critical composition x=1 where the Neel temperature vanishes at ambient pressure. In both cases ρ(T) varies approximately as T1.5 over a wide range below 100 K. However, on closer analysis the resistivity exponent in NiS2 exhibits an undulating variation with temperature not seen in NiSSe (x=1). This difference in behaviour may be due to the effects of spin-fluctuation scattering of charge carriers on cold and hot spots of the Fermi surface in the presence of quenched disorder, which is higher in NiSSe than in stoichiometric NiS2.
Create a lesson
Related papers
Bound states, resonances, and their thermodynamic properties in pseudospin-1 systems with short-range impurities
E. V. Gorbar, Pavlo Sukhachov
Engineering tunable p-wave magnetism in antiferromagnetic bilayers
Yu-Han Lin, Jin-Wei Dong, Ziqiang Wang et al.
Higher-Winding Fractionalization
Kishore Iyer, Christophe Mora, Daniele Guerci
Green-function Zeros Encode Competing Mott and Charge-ordering Scales
Peizhi Mai, Philip W. Phillips
Chiral Color Ice: Exact Local Handedness Constraints and Möbius Zero Modes in Frustrated Magnets
Péter Kránitz, Yasir Iqbal, Karlo Penc
Pseudospin Dynamics of Charge Order
Ping Tang