Size-dependent fine-structure splitting in self-organized InAs/GaAs quantum dots
R. Seguin, A. Schliwa, S. Rodt, K. Pötschke, U. W. Pohl, D. Bimberg
Abstract
A systematic variation of the exciton fine-structure splitting with quantum dot size in single InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition is observed. The splitting increases from -80 to as much as 520 μeV with quantum dot size. A change of sign is reported for small quantum dots. Model calculations within the framework of eight-band k.p theory and the configuration interaction method were performed. Different sources for the fine-structure splitting are discussed, and piezoelectricity is pinpointed as the only effect reproducing the observed trend.
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